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| March 1998 FDT459N N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control. Features 6.5 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 V RDS(ON) = 0.055 @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D G D S G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage TA = 25oC unless otherwise noted FDT459N 30 20 (Note 1a) Units V V A Gate-Source Voltage - Continuous Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) 6.5 20 3 1.3 1.1 -55 to 150 W TJ,TSTG RJA RJC Operating and Storage Temperature Range C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 42 12 C/W C/W * Order option J23Z for cropped center drain lead. (c) 1998 Fairchild Semiconductor Corporation FDT459NRev.C Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25 C VDS = 24 V, VGS = 0 V TJ =55C IGSSF IGSSR VGS(th) Gate - Body Leakage, Forward Gate - Body Leakage, Reverse (Note 2) o 30 33 1 10 100 -100 V mV/ C A A nA nA o BVDSS/TJ IDSS VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25 oC VGS = 10 V, ID = 6.5 A TJ =125C VGS = 4.5 V, ID = 5.5 A 1 1.6 -4.2 0.031 0.044 0.046 20 16 ON CHARACTERISTICS Gate Threshold Voltage Gate Threshold Voltage Temp.Coefficient Static Drain-Source On-Resistance 2 V mV/ oC VGS(th)/TJ RDS(ON) 0.035 0.06 0.055 ID(ON) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD Notes: On-State Drain Current Forward Transconductance VGS = 10 V, VDS = 5 V VDS = 10 V, ID = 6.5 A VDS = 15 V, VGS = 0 V, f = 1.0 MHz A S DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 365 210 70 pF pF pF SWITCHING CHARACTERISTICS (Note 2) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 10 V, ID = 6.5 A, VGS = 10 V VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 5.2 8.2 6 16 12 2.2 3 11 16 12 26 17 ns ns ns ns nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.5 A (Note 2) 2.5 0.8 1.2 A V 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. Typical RJA using the board layouts shown below on FR-4 PCB in a still air environment: a. 42o C/W when mounted on a 1 in2 pad of 2oz Cu. b. 95oC/W when mounted on a pad of 2oz Cu. 0.066 in2 c. 110oC/W when mounted on a 0.00123 in2 pad of 2oz Cu. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDT459NRev.C Typical Electrical Characteristics 30 I D , DRAIN-SOURCE CURRENT (A) 25 20 15 10 5 0 5.0 R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 6.0 4.5 3.5 3 2.5 2 1.5 1 0.5 VGS = 3.5V 4.0 4.5 5.0 6.0 10 4.0 3.5 3.0 0 1 2 3 4 5 0 5 10 15 20 25 30 VDS , DRAIN-SOURCE VOLTAGE (V) I D , DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 DRAIN-SOURCE ON-RESISTANCE 0.14 I D = 6.5A 1.4 R DS(ON) , ON-RESISTANCE (OHM) I D= 6.5A 0.12 0.1 0.08 0.06 0.04 V GS = 10V R DS(ON) NORMALIZED 1.2 1 TJ = 125C 0.8 25C 0.02 2 4 6 8 10 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 150 VGS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 25 I S , REVERSE DRAIN CURRENT (A) VDS = 10V 20 T = -55C J 25C 125C VGS = 0V 1 I D , DRAIN CURRENT (A) 20 TJ = 125C 25C -55C 15 0.1 10 0.01 5 0.001 0 1 2 3 4 5 6 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VGS , GATE TO SOURCE VOLTAGE (V) VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDT459NRev.C Typical Electrical Characteristics 10 V GS , GATE-SOURCE VOLTAGE (V) 1000 I D = 6.5A 8 VDS= 5V 10V CAPACITANCE (pF) 15V 400 C iss Coss 6 200 4 100 2 50 30 0.1 f = 1 MHz VGS = 0 V 0.3 1 3 C rss 0 0 2 4 6 8 10 12 14 Q g , GATE CHARGE (nC) 10 30 VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 40 20 10 I D , DRAIN CURRENT (A) 5 2 1 0.5 IT LIM N) S(O RD POWER (W) 1m s 10m s 100 ms 1s 10s DC 100 200 us 160 SINGLE PULSE R JA= see note 1c TA = 25C 120 0.1 0.05 VGS =10V SINGLE PULSE RJA = See Note 1c TA = 25C A 0.2 0.5 1 2 5 10 20 30 50 80 40 0.01 0.1 0 0.001 0.01 0.1 1 10 100 300 V DS , DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk) RJA (t) = r(t) * RJA R JA = See Note 1c t1 t2 TJ - TA = P * R JA (t) Duty Cycle, D = t 1 / t 2 10 100 300 Figure 11. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. FDT459NRev.C |
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